- 专利标题： Semiconductor devices with core-shell structures
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申请号： US16049358申请日： 2018-07-30
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公开(公告)号： US11245033B2公开(公告)日： 2022-02-08
- 发明人: Carlos H. Diaz , Chun-Hsiung Lin , Huicheng Chang , Syun-Ming Jang , Chien-Hsun Wang , Mao-Lin Huang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/78 ; H01L29/06 ; H01L29/66 ; H01L29/775 ; H01L29/778 ; H01L29/786 ; B82Y10/00 ; H01L21/02 ; H01L29/165 ; H01L29/51
摘要：
In a method of manufacturing a semiconductor device, a support layer is formed over a substrate. A patterned semiconductor layer made of a first semiconductor material is formed over the support layer. A part of the support layer under a part of the semiconductor layer is removed, thereby forming a semiconductor wire. A semiconductor shell layer made of a second semiconductor material different from the first semiconductor material is formed around the semiconductor wire.
公开/授权文献
- US20180350984A1 SEMICONDUCTOR DEVICES WITH CORE-SHELL STRUCTURES 公开/授权日：2018-12-06
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