- 专利标题： Gate-all-around field effect transistor having multiple threshold voltages
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申请号： US16745100申请日： 2020-01-16
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公开(公告)号： US11245020B2公开(公告)日： 2022-02-08
- 发明人: Ruqiang Bao , Michael A. Guillorn , Terence Hook , Robert R. Robison , Reinaldo Vega , Tenko Yamashita
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjan & Bitetto, P.C.
- 代理商 Erik Johnson
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/49 ; H01L29/06 ; H01L29/775 ; B82Y10/00 ; H01L29/786
摘要：
One example of an apparatus includes a conducting channel region. The conducting channel region includes a plurality of epitaxially grown, in situ doped conducting channels arranged in a spaced apart relation relative to each other. A source positioned at a first end of the conducting channel region, and a drain positioned at a second end of the conducting channel region. A gate surrounds all sides of the conducting channel region and fills in spaces between the plurality of epitaxially grown, in situ doped conducting channels.
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