- 专利标题： Semiconductor device and method for fabricating the same
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申请号： US16739129申请日： 2020-01-10
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公开(公告)号： US11245019B2公开(公告)日： 2022-02-08
- 发明人: Woo-Song Ahn , Sang-Don Yi , Yongchul Oh
- 申请人： XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- 申请人地址： CN Qingdao
- 专利权人： XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- 当前专利权人： XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- 当前专利权人地址： CN Qingdao
- 代理机构： ScienBiziP, P.C.
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L27/108 ; H01L49/02
摘要：
A semiconductor device includes a substrate, a gate feature, a gate spacer, and a dielectric layer. The gate feature is above the substrate and includes a gate electrode. The gate spacer is on a sidewall of the gate feature. The dielectric layer is in contact with the gate spacer and has a larger thickness than the gate electrode.
公开/授权文献
- US20210217867A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2021-07-15
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