- 专利标题: Semiconductor device
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申请号: US16670725申请日: 2019-10-31
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公开(公告)号: US11244883B2公开(公告)日: 2022-02-08
- 发明人: Hidenori Egawa
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Tokyo
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2009-166975 20090715
- 主分类号: H01L23/34
- IPC分类号: H01L23/34 ; H01L23/373 ; H01L23/498 ; H01L23/00 ; H01L23/12 ; H01L23/50
摘要:
A semiconductor device includes a wiring substrate including a first surface, a second surface opposite to the first surface, a first heat dissipation conductive pattern formed on the first surface, a second heat dissipation conductive pattern formed on the first surface, a first wiring formed on the first surface, and a second wiring formed on the first surface. The semiconductor device also includes a semiconductor chip disposed on the wiring substrate and including a third surface and a fourth surface opposite to the third surface. In plan view, the second wiring is adjacent to the first and second heat dissipation conductive patterns without intervening any wiring and any conductive pattern between the second wiring and the first and second heat dissipation conductive patterns.
公开/授权文献
- US20200066611A1 SEMICONDUCTOR DEVICE 公开/授权日:2020-02-27
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