- 专利标题： Method for making self-aligned post-cut SDB FinFET device
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申请号： US17027126申请日： 2020-09-21
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公开(公告)号： US11244865B1公开(公告)日： 2022-02-08
- 发明人: Yong Li
- 申请人： SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
- 申请人地址： CN Shanghai
- 专利权人： SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
- 当前专利权人： SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
- 当前专利权人地址： CN Shanghai
- 代理机构： Alston & Bird LLP
- 优先权： CN202010729632.7 20200727
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/8234 ; H01L21/764 ; H01L21/3205 ; H01L21/3213 ; H01L21/3105
摘要：
The disclosure includes forming a SiGe region on two adjacent fin structures and a SiP region on the fin structures adjacent to the SiGe region; forming SDB trenches; forming SiN plugs over the SDB trenches to make top-sealed hollow SDB trenches. The process for forming SDB trenches adds no additional cost, and the process is compatible with existing process flow. The SiN plugs are configured to seal the SDB trenches from top, such that the SDB trenches are filled with air and do not need to be thermally annealed. The advantage includes low fin loss in the annealing oxidation process and better controlled uniformity of the SDB trenches. Air in the SDB trenches reduces the parasitic capacitance of adjacent contacts, therefore and it is conducive to improving the device speed.
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