- 专利标题： Method for processing workpiece
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申请号： US16898492申请日： 2020-06-11
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公开(公告)号： US11244828B2公开(公告)日： 2022-02-08
- 发明人: Yoshihide Kihara , Toru Hisamatsu , Tomoyuki Oishi
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Studebaker & Brackett PC
- 优先权： JP2016-065806 20160329,JP2016-147477 20160727
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/027 ; G03F1/80 ; G03F1/48 ; H01L21/02 ; H01L21/033 ; H01J37/32 ; H01L21/3213
摘要：
According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.
公开/授权文献
- US20200303181A1 METHOD FOR PROCESSING WORKPIECE 公开/授权日：2020-09-24
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