- 专利标题: Process for producing sputtering target and sputtering target
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申请号: US17027228申请日: 2020-09-21
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公开(公告)号: US11244814B2公开(公告)日: 2022-02-08
- 发明人: Mikio Takigawa
- 申请人: SUMITOMO CHEMICAL COMPANY, LIMITED
- 申请人地址: JP Tokyo
- 专利权人: SUMITOMO CHEMICAL COMPANY, LIMITED
- 当前专利权人: SUMITOMO CHEMICAL COMPANY, LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 优先权: JP2016-138710 20160713
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; H01J37/34
摘要:
A process for producing a sputtering target in which a target material is diffusion-bonded to a backing plate material having an annular frame part, the method comprising:
an incorporating step of incorporating the target material inside the frame part of the backing plate material in such a manner that the uppermost position of the target material becomes higher than the uppermost position of the frame part of the backing plate material in a height direction of the frame part of the backing plate material; and
a bonding step of diffusion-bonding the target material to the backing plate material.
an incorporating step of incorporating the target material inside the frame part of the backing plate material in such a manner that the uppermost position of the target material becomes higher than the uppermost position of the frame part of the backing plate material in a height direction of the frame part of the backing plate material; and
a bonding step of diffusion-bonding the target material to the backing plate material.
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