Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16845415Application Date: 2020-04-10
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Publication No.: US11232978B2Publication Date: 2022-01-25
- Inventor: Jeng Chang Her , Cha-Hsin Chao , Yi-Wei Chiu , Li-Te Hsu , Ying Ting Hsia
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/768 ; H01L21/02 ; H01L21/3115 ; H01L23/522 ; H01L23/528 ; H01L23/532
Abstract:
In a method for manufacturing a semiconductor device, a first interlayer dielectric layer is formed over a substrate. First recesses are formed in the first interlayer dielectric layer. First metal wirings are formed in the first recesses. A first etch-resistance layer is formed in a surface of the first interlayer dielectric layer between the first metal wirings but not on upper surfaces of the first metal wirings. A first insulating layer is formed on the first etch-resistance layer and the upper surfaces of the first metal wirings.
Public/Granted literature
- US20200243378A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-07-30
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