- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US16570067申请日： 2019-09-13
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公开(公告)号： US11195849B2公开(公告)日： 2021-12-07
- 发明人: Yasuhito Yoshimizu , Yuji Setta , Masaru Kito
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Minato-ku
- 专利权人： Toshiba Memory Corporation
- 当前专利权人： Toshiba Memory Corporation
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JPJP2019-050310 20190318
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L23/00 ; H01L21/28 ; H01L21/02 ; H01L27/11573 ; H01L25/00 ; H01L25/18 ; H01L21/225 ; H01L21/683
摘要：
In one embodiment, a semiconductor device includes a first film including a plurality of electrode layers and a plurality of insulating layers provided alternately in a first direction, and a first semiconductor layer provided in the first film via a charge storage layer and extending in the first direction. The device further includes a first conductive member provided in the first film and extending in the first direction, and a second semiconductor layer provided on the first film to contact the first semiconductor layer. The second semiconductor layer includes a first surface on a side of the first film, and a second surface on an opposite side of the first surface. The second surface is an uneven face protruding towards the first direction.
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