Techniques for simultaneously plating features of varying sizes on a semiconductor substrate are provided. In one aspect, a method for electroplating includes: placing a shield over a wafer, offset from a surface of the wafer, which covers portions of the wafer and leaves other portions of the wafer uncovered; and depositing at least one metal onto the wafer by electroplating to simultaneously form metallurgical features of varying sizes on the wafer based on the shield altering local deposition rates for the portions of the wafer covered by the shield. An electroplating apparatus is also provided.