- 专利标题: Substrate processing method
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申请号: US16416609申请日: 2019-05-20
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公开(公告)号: US11118267B2公开(公告)日: 2021-09-14
- 发明人: Hitoshi Kato , Toshiyuki Nakatsubo , Takeshi Kobayashi , Tomoya Hasegawa
- 申请人: TOKYO ELECTRON LIMITED
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer; Tanya E. Harkins
- 优先权: JPJP2018-097857 20180522
- 主分类号: C23C16/458
- IPC分类号: C23C16/458 ; C23C16/455
摘要:
A method of processing a substrate, includes: mounting at least one substrate on at least one substrate holder configured to rotate about an axis of the at least one substrate holder, the at least one substrate holder being provided along a circumferential direction of a rotary table installed inside a processing chamber; holding the at least one substrate by the at least one substrate holder in a contact manner by bringing a substrate contact portion into contact with at least three points on a lateral surface of the at least one substrate mounted on the at least one substrate holder; and performing a substrate process while rotating the rotary table and rotating the at least one substrate holder about the axis of the at least one substrate holder in a state where the at least one substrate is held by the at least one substrate holder in the contact manner.
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