- 专利标题: Determining overlay of features of a memory array
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申请号: US16372950申请日: 2019-04-02
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公开(公告)号: US11094643B2公开(公告)日: 2021-08-17
- 发明人: Kendall Smith , Kari McLaughlin , Mario J. Di Cino , Xue Chen , Lane A. Gray , Joseph G. Lindsey
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Brooks, Cameron & Huebsch, PLLC
- 主分类号: H01L23/544
- IPC分类号: H01L23/544 ; H01L21/768 ; H01L21/027 ; H01L23/528 ; H01L21/3213
摘要:
Methods, apparatuses, and systems related to determining overlay of features of a memory array are described. An example method includes forming a plurality of contacts on a working surface and selectively forming a first portion of a layer of conductive lines and a second portion of the layer of conductive lines in contact with the contacts. The first portion of the layer of conductive lines formed over the working surface is separated from the second portion of the layer of conductive lines formed over the working surface by a gap. The method includes determining an overlay of at least one of the contacts formed over the working surface in the gap relative to one of the conductive lines formed over the working surface.
公开/授权文献
- US20200321283A1 DETERMINING OVERLAY OF FEATURES OF A MEMORY ARRAY 公开/授权日:2020-10-08
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