- 专利标题： Methods for assessing semiconductor structures
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申请号： US16661702申请日： 2019-10-23
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公开(公告)号： US11081407B2公开(公告)日： 2021-08-03
- 发明人: Igor Rapoport , Srikanth Kommu , Igor Peidous , Gang Wang , Jeffrey L. Libbert
- 申请人： GlobalWafers Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： GlobalWafers Co., Ltd.
- 当前专利权人： GlobalWafers Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Armstrong Teasdale LLP
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L23/66 ; G01R31/26 ; H01L27/12
摘要：
Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed. Embodiments of the assessing method may involve measuring an electrostatic parameter at an initial state and at an excited state in which charge carriers are generated.
公开/授权文献
- US20200058566A1 METHODS FOR ASSESSING SEMICONDUCTOR STRUCTURES 公开/授权日：2020-02-20
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