- 专利标题： Integrated circuit comprising a substrate equipped with a trap-rich region, and fabricating process
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申请号： US16278313申请日： 2019-02-18
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公开(公告)号： US11075177B2公开(公告)日： 2021-07-27
- 发明人: Didier Dutartre
- 申请人： STMicroelectronics (Crolles 2) SAS
- 申请人地址： FR Crolles
- 专利权人： STMicroelectronics (Crolles 2) SAS
- 当前专利权人： STMicroelectronics (Crolles 2) SAS
- 当前专利权人地址： FR Crolles
- 代理机构： Crowe & Dunlevy
- 优先权： FR1851615 20180223
- 主分类号： H01L23/60
- IPC分类号： H01L23/60 ; H01L23/66 ; H01L21/762 ; H01L29/06
摘要：
An integrated circuit includes a substrate having at least one first domain and at least one second domain that is different from the at least one first domain. A trap-rich region is provided in the substrate at the locations of the at least one second domain only. Locations of the at least one first domain do not include the trap-rich region.
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