Invention Grant
- Patent Title: Pixel array and fabrication method thereof
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Application No.: US16405126Application Date: 2019-05-07
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Publication No.: US10971523B2Publication Date: 2021-04-06
- Inventor: Tongshang Su , Dongfang Wang , Jun Cheng , Jun Liu , Qinghe Wang , Guangyao Li , Liangchen Yan
- Applicant: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Hefei; CN Beijing
- Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Hefei; CN Beijing
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg
- Priority: CN201810716653.8 20180703
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G09G3/20 ; G09G3/22

Abstract:
The present disclosure provides a pixel array and a fabrication method thereof. The pixel array includes a plurality of gate lines and a plurality of data lines which are arranged intersected and insulated and a pixel unit disposed at a position where each of the plurality of gate lines and each of the plurality of data lines are intersected. The pixel unit includes a thin film transistor (TFT). The width-to-length ratios of channels of the TFTs are sequentially increased in such a manner that the width-to-length ratios of the channels of the TFTs in the pixel units positioned in a same row (and/or a same column) are sequentially increased along a scanning direction of the gate line coupled to gate electrodes of the TFTs in the same row (and/or along a data writing direction of the data line coupled to the source electrodes of the TFTs in the same column).
Public/Granted literature
- US20200013806A1 Pixel Array and Fabrication Method Thereof Public/Granted day:2020-01-09
Information query
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