Invention Grant
- Patent Title: Info structure with copper pillar having reversed profile
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Application No.: US16410183Application Date: 2019-05-13
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Publication No.: US10950478B2Publication Date: 2021-03-16
- Inventor: Hsi-Kuei Cheng , Ching Fu Chang , Chih-Kang Han , Hsin-Chieh Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/683 ; H01L23/00 ; H01L21/78 ; H01L21/56 ; H01L23/31 ; H01L21/3105 ; H01L21/311 ; H01L21/288 ; H01L21/768 ; H01L23/48 ; H01L25/065
Abstract:
A method includes forming a first polymer layer to cover a metal pad of a wafer, and patterning the first polymer layer to form a first opening. A first sidewall of the first polymer layer exposed to the first opening has a first tilt angle where the first sidewall is in contact with the metal pad. The method further includes forming a metal pillar in the first opening, sawing the wafer to generate a device die, encapsulating the device die in an encapsulating material, performing a planarization to reveal the metal pillar, forming a second polymer layer over the encapsulating material and the device die, and patterning the second polymer layer to form a second opening. The metal pillar is exposed through the second opening. A second sidewall of the second polymer layer exposed to the second opening has a second tilt angle greater than the first tilt angle.
Public/Granted literature
- US20190267274A1 Info Structure with Copper Pillar Having Reversed Profile Public/Granted day:2019-08-29
Information query
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