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US10937952B2 Semiconductor devices including stress-inducing layers and methods of forming the same 有权

Semiconductor devices including stress-inducing layers and methods of forming the same
摘要：
A semiconductor device includes a first electrode disposed on a substrate, a magnetic tunnel junction (MTJ) on the first electrode, a capping layer on the MTJ, a stress-inducing layer on the capping layer, and a second electrode on the stress-inducing layer. The stress-inducing layer may have tensile stress.
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