- 专利标题： Imaging element, solid state imaging device, and electronic device
-
申请号： US16343516申请日： 2017-10-25
-
公开(公告)号： US10937913B2公开(公告)日： 2021-03-02
- 发明人: Toshiki Moriwaki
- 申请人： SONY CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Sheridan Ross P.C.
- 优先权： JPJP2016-215162 20161102
- 国际申请： PCT/JP2017/038489 WO 20171025
- 国际公布： WO2018/084047 WO 20180511
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L31/0224 ; H01L33/42 ; H01L21/02 ; H01L27/146 ; H01L27/30
摘要：
An imaging element includes a first electrode, a second electrode, and a light receiving layer between the first electrode and the second electrode to receive incident light from the second electrode. The second electrode includes an indium-tin oxide layer which includes at least one of silicon or silicon oxide.
公开/授权文献
信息查询
IPC分类:
