- 专利标题： Void formation for charge trap structures
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申请号： US16452292申请日： 2019-06-25
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公开(公告)号： US10937802B2公开(公告)日： 2021-03-02
- 发明人: Chris M. Carlson
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman Lundberg & Woessner, P.A.
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L21/28 ; H01L27/1157 ; H01L29/51 ; H01L29/423
摘要：
Various embodiments include methods and apparatus having a number of charge trap structures, where each charge trap structure includes a dielectric barrier between a gate and a blocking dielectric region, the blocking dielectric region located on a charge trap region of the charge trap structure. At least a portion of the gate can be separated by a void from a region which the charge trap structure is directly disposed. Additional apparatus, systems, and methods are disclosed.
公开/授权文献
- US20190312058A1 VOID FORMATION FOR CHARGE TRAP STRUCTURES 公开/授权日：2019-10-10
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