- 专利标题： Selective dielectric deposition
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申请号： US16364841申请日： 2019-03-26
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公开(公告)号： US10937690B2公开(公告)日： 2021-03-02
- 发明人: Anish Khandekar , Lars P. Heineck , Silvia Borsari , Zhiqiang Xie
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Brooks, Cameron & Huebsch, PLLC
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/311
摘要：
Methods, apparatuses, and systems related to selectively depositing a liner material on a sidewall of an opening are described. An example method includes forming a liner material on a dielectric material of sidewalls of an opening and a bottom surface of an opening and removing the first liner material of the sidewalls of the opening and the bottom surface of the opening using a non-selective etch chemistry. The example method further includes forming a second liner material on the dielectric material of the sidewalls of the opening to avoid contact with the bottom surface of the opening.
公开/授权文献
- US20200312712A1 SELECTIVE DIELECTRIC DEPOSITION 公开/授权日：2020-10-01
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