- 专利标题: Gas injection module, substrate processing apparatus, and method of fabricating semiconductor device using the same
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申请号: US16509946申请日: 2019-07-12
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公开(公告)号: US10934621B2公开(公告)日: 2021-03-02
- 发明人: Minkyu Sung , Sung-Ki Lee , Dougyong Sung , Sang-Ho Lee , Kangmin Jeon
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Volentine, Whitt & Francos, PLLC
- 优先权: KR10-2018-0144454 20181121
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; H01L21/683 ; H01J37/32 ; C23C16/509
摘要:
A gas injection module includes a showerhead having first injection holes on a first region of the showerhead and second injection holes on a second region of the showerhead, the second region being outside the first region, a first distribution plate on the showerhead and having first and second upper passages respectively connected to the first and second injection holes, and a flow rate controller on the first and second upper passages of the first distribution plate. The flow rate controller reduces a difference in pressure within the first and second upper passages so that the gas may have similar flow rates within the first and second injection holes.
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