- 专利标题： Multiple work function nanosheet field effect transistor using sacrificial silicon germanium growth
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申请号： US15917089申请日： 2018-03-09
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公开(公告)号： US10930762B2公开(公告)日： 2021-02-23
- 发明人: Takashi Ando , Choonghyun Lee , Pouya Hashemi
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Douglas Pearson
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L27/092 ; H01L21/8238 ; H01L29/78 ; H01L29/06 ; H01L29/786 ; H01L29/51 ; H01L29/423
摘要：
A method of forming a semiconductor device that includes forming a stack of nanosheets composed of a semiconductor material; and forming a sacrificial layer of a work function adjusting material on the semiconductor material of the stack of nanosheets. In a following step, the work function adjusting material is mixed into the semiconductor material on at least a channel surface of nanosheets. The sacrificial layer is removed. An interfacial oxide layer is formed including elements from the semiconductor material and the work function adjusting layer on said at least the channel surface of the stack of nanosheets. A gate structure including a gate dielectric is formed on the interfacial oxide that is present on the channel surface of the nanosheets.
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