- 专利标题： Systems and methods of dislocation filtering for layer transfer
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申请号： US16348125申请日： 2017-11-08
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公开(公告)号： US10903073B2公开(公告)日： 2021-01-26
- 发明人: Jeehwan Kim , Kyusang Lee
- 申请人： Massachusetts Institute of Technology
- 申请人地址： US MA Cambridge
- 专利权人： Massachusetts Institute of Technology
- 当前专利权人： Massachusetts Institute of Technology
- 当前专利权人地址： US MA Cambridge
- 代理机构： Wolf, Greenfield & Sacks, P.C.
- 国际申请： PCT/US2017/060568 WO 20171108
- 国际公布： WO2018/089444 WO 20180517
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L21/02 ; H01L21/683 ; H01L21/762
摘要：
A method of manufacturing a semiconductor device includes forming a first epitaxial layer on a first substrate. The first substrate includes a first semiconductor material having a first lattice constant and the first epitaxial layer includes a second semiconductor material having a second lattice constant different from the first lattice constant. The method also includes disposing a graphene layer on the first epitaxial layer and forming a second epitaxial layer comprising the second semiconductor material on the graphene layer. This method can increase the substrate reusability, increase the release rate of functional layers, and realize precise control of release thickness.
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