- 专利标题： Photoelectric sensor, fabricating method thereof and display device
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申请号： US16327892申请日： 2018-05-17
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公开(公告)号： US10886310B2公开(公告)日： 2021-01-05
- 发明人: Yuzhen Guo , Xue Dong , Haisheng Wang , Chunwei Wu , Yingming Liu , Rui Xu
- 申请人： BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址： CN Beijing
- 专利权人： BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人： BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址： CN Beijing
- 代理机构： Brooks Kushman P.C.
- 优先权： CN201710383647 20170526
- 国际申请： PCT/CN2018/087253 WO 20180517
- 国际公布： WO2018/214799 WO 20181129
- 主分类号： H01L27/146
- IPC分类号： H01L27/146 ; G06F21/32
摘要：
The application discloses a photoelectric sensor, a fabricating method thereof, and a display device. The method for fabricating the photoelectric sensor, includes: fabricating a thin film transistor (TFT) array and a photodiode array on a silicon substrate; transferring the TFT array onto a base substrate by a micro transfer process; and placing the photodiode array on the base substrate formed with the TFT array, in a manner that an orthographic projection of the photodiode array on the base substrate overlaps with an orthographic projection of the TFT array on the base substrate.
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