- 专利标题: Plasma processing apparatus and prediction method of the condition of plasma processing apparatus
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申请号: US15904917申请日: 2018-02-26
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公开(公告)号: US10886110B2公开(公告)日: 2021-01-05
- 发明人: Yoshito Kamaji , Masahiro Sumiya
- 申请人: HITACHI HIGH-TECH CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: HITACHI HIGH-TECH CORPORATION
- 当前专利权人: HITACHI HIGH-TECH CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Miles & Stockbridge, P.C.
- 优先权: JP2017-179668 20170920
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01J37/24 ; G06F17/18 ; G06N7/00 ; G06N20/10 ; G06N3/04 ; H05H13/00
摘要:
A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first threshold and the calculated second soundness index value and the second threshold.
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