- 专利标题： One time programmable memory cell (OTP) including main OTP cell transistor, redundant OTP transistor, and access transistor
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申请号： US16515287申请日： 2019-07-18
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公开(公告)号： US10885997B2公开(公告)日： 2021-01-05
- 发明人: Min Yeol Ha
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2019-0001009 20190104
- 主分类号： G11C17/16
- IPC分类号： G11C17/16 ; G11C17/18 ; G11C29/00
摘要：
A one-time programmable (OTP) memory cell, and an OTP memory and a memory system including the same may be provided. The OTP memory cell includes a main OTP cell transistor, a redundant OTP cell transistor, and an access transistor that are connected in series between a first node in a floating state and a second node. The OTP memory cell is configured to apply a program voltage to gates of the main OTP cell transistor and the redundant OTP cell transistor, and a program access voltage lower than the program voltage to a gate of the access transistor, during a program operation.
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