- 专利标题: Power gating system and memory system including the power gating system
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申请号: US16445831申请日: 2019-06-19
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公开(公告)号: US10885947B2公开(公告)日: 2021-01-05
- 发明人: Woongrae Kim
- 申请人: SK hynix Inc.
- 申请人地址: KR Icheon-si
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Icheon-si
- 代理机构: William Park & Associates Ltd.
- 优先权: KR10-2018-0134575 20181105
- 主分类号: G11C5/14
- IPC分类号: G11C5/14 ; H03K19/17772 ; H03K19/173
摘要:
A power gating system including: a first power line coupled to a first pad; a second power line coupled to a second pad; a third power line coupled to a plurality of logic gates in common; a first power gating switch coupled between the first and third power lines; and a second power gating switch coupled between the second and third power lines. When a double power mode is set, the first and second power gating switches may be turned on to couple the first and second power lines to the third power line at the same time.
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