- 专利标题： Semiconductor device and method for fabricating the same
-
申请号： US16439712申请日： 2019-06-13
-
公开(公告)号： US10847709B1公开(公告)日： 2020-11-24
- 发明人: Chih-Wei Kuo , Meng-Jun Wang , Yi-Wei Tseng , Yu-Tsung Lai , Jiunn-Hsiung Liao
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： CN201910419208 20190520
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L43/12 ; H01L27/22
摘要：
A semiconductor device includes: a magnetic tunneling junction (MTJ) on a substrate; a first inter-metal dielectric (IMD) layer around the MTJ; a metal interconnection on and directly contacting the MTJ; a second IMD layer on the first IMD layer and around the metal interconnection; and a metal oxide layer on the second IMD layer and around the metal interconnection.
公开/授权文献
- US20200373479A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2020-11-26
信息查询
IPC分类:
