Invention Grant
- Patent Title: Semiconductor device and method of manufacture
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Application No.: US16390814Application Date: 2019-04-22
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Publication No.: US10833030B2Publication Date: 2020-11-10
- Inventor: Cheng-Hsien Hsieh , Hsien-Wei Chen , Chen-Hua Yu , Tsung-Shu Lin , Wei-Cheng Wu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/10 ; H01L25/00 ; H01L21/56 ; H01L23/48 ; H01L23/31

Abstract:
A redistribution layer with a landing pad is formed over a substrate with one or more mesh holes extending through the landing pad. The mesh holes may be arranged in a circular shape, and a passivation layer may be formed over the landing pad and the mesh holes. An opening is formed through the passivation layer and an underbump metallization is formed in contact with an exposed portion of the landing pad and extends over the mesh holes. By utilizing the mesh holes, sidewall delamination and peeling that might otherwise occur may be reduced or eliminated.
Public/Granted literature
- US20190252334A1 Semiconductor Device and Method of Manufacture Public/Granted day:2019-08-15
Information query
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