Invention Grant
- Patent Title: Method and system of forming integrated circuit
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Application No.: US16102589Application Date: 2018-08-13
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Publication No.: US10811316B2Publication Date: 2020-10-20
- Inventor: Ka Fai Chang , Fong-Yuan Chang , Chin-Chou Liu , Yi-Kan Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/822
- IPC: H01L21/822 ; H01L23/522 ; H01L23/528 ; H01L23/00
Abstract:
A method for forming an integrated circuit (IC) is provided. The method includes the following operations. A circuit layout including a first load region and a second load region is received. A full power network of the circuit layout is obtained. The full power network is transformed into a first power network according to the first load region. A first power simulation is performed upon the first power network. The full power network is transformed into a second power network according to the second load region. A second power simulation is performed upon the second power network. The IC is fabricated according to the circuit layout.
Public/Granted literature
- US20200051863A1 METHOD AND SYSTEM OF FORMING INTEGRATED CIRCUIT Public/Granted day:2020-02-13
Information query
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