- 专利标题: Semiconductor device
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申请号: US16571023申请日: 2019-09-13
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公开(公告)号: US10784866B2公开(公告)日: 2020-09-22
- 发明人: Yasuhiro Hirashima , Masaru Koyanagi , Yutaka Takayama
- 申请人: Toshiba Memory Corporation
- 申请人地址: JP Tokyo
- 专利权人: Toshiba Memory Corporation
- 当前专利权人: Toshiba Memory Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Kim & Stewart LLP
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@9e629a7
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; H03K3/00 ; H03K19/0175 ; H01L23/538
摘要:
A semiconductor device includes a latch circuit including a first inverter configured to output a first signal based on an input signal, a second inverter configured to output a first clock signal based on a first strobe signal, a third inverter configured to output a second clock signal based on a second strobe signal, a first clock generation circuit configured to generate a third clock signal having transitions that are delayed with respect to the first clock signal, a second clock generation circuit configured to generate a fourth clock signal having transitions that are delayed with respect to the second clock signal, a fourth inverter configured to output an inversion signal of the first signal in accordance with the third and fourth clock signals, and a data latch circuit configured to latch an output signal of the fourth inverter.
公开/授权文献
- US20200014385A1 SEMICONDUCTOR DEVICE 公开/授权日:2020-01-09
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