- 专利标题： FinFET device and method of forming same
-
申请号： US16122793申请日： 2018-09-05
-
公开(公告)号： US10784377B2公开(公告)日： 2020-09-22
- 发明人: Chia-Ling Chan , Yen-Chun Lin
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/22 ; H01L29/66 ; H01L29/06 ; H01L29/08 ; H01L23/532 ; H01L29/423 ; H01L21/768 ; H01L21/308 ; H01L21/8238 ; H01L21/324
摘要：
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, forming a first spacer over the dummy gate structure, implanting a first dopant in the fin to form a doped region of the fin adjacent the first spacer, removing the doped region of the fin to form a first recess, wherein the first recess is self-aligned to the doped region, and epitaxially growing a source/drain region in the first recess.
公开/授权文献
- US20190103487A1 FinFET Device and Method of Forming Same 公开/授权日：2019-04-04
信息查询
IPC分类:
