- 专利标题： Doped tantalum nitride for copper barrier applications
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申请号： US13689871申请日： 2012-11-30
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公开(公告)号： US10784157B2公开(公告)日： 2020-09-22
- 发明人: Annamalai Lakshmanan , Paul F. Ma , Mei Chang , Jennifer Shan
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/538 ; H01L21/285 ; H01L23/532
摘要：
Described are doped TaN films, as well as methods for providing the doped TaN films. Doping TaN films with Ru, Cu, Co, Mn, Al, Mg, Cr, Nb, Ti and/or V allows for enhanced copper barrier properties of the TaN films. Also described are methods of providing films with a first layer comprising doped TaN and a second layer comprising one or more of Ru and Co, with optional doping of the second layer.
公开/授权文献
- US20130140698A1 Doped Tantalum Nitride for Copper Barrier Applications 公开/授权日：2013-06-06
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