- 专利标题： Back-side friction reduction of a substrate
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申请号： US15650352申请日： 2017-07-14
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公开(公告)号： US10784100B2公开(公告)日： 2020-09-22
- 发明人: Hoyoung Kang
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; G03F7/42 ; H01L21/027 ; H01L21/67 ; G03F7/09 ; G03F7/16 ; H01L21/306 ; H01L21/687 ; H01L21/66
摘要：
A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. The front side surface is opposite to the backside surface of the substrate. A substrate has a bare backside surface with a first coefficient of friction. A film layer is formed onto the backside surface of the substrate. The film layer formed on the backside surface of the substrate has a second coefficient of friction. The second coefficient of friction is lower than the first coefficient of friction.
公开/授权文献
- US20180025899A1 BACK-SIDE FRICTION REDUCTION OF A SUBSTRATE 公开/授权日：2018-01-25
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