Invention Grant
- Patent Title: Method for improved cut metal patterning
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Application No.: US16549943Application Date: 2019-08-23
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Publication No.: US10783313B2Publication Date: 2020-09-22
- Inventor: Kuang-Ching Chang , Ting-Wei Chiang , Hui-Zhong Zhuang , Jung-Chan Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L25/00 ; H03K19/00 ; H03K17/00 ; G06F30/398 ; G06F111/04 ; G06F30/347 ; H03K19/018 ; G06F30/3947 ; H03K19/0175 ; H03K19/0185 ; H03K17/687 ; G06F30/3953 ; H03K19/17736 ; G06F30/392

Abstract:
A method of preparing an integrated circuit device design including analyzing a preliminary device layout to identify a vertical abutment between a first cell and a second cell, the locations of, and spacing between, internal metal cuts within the first and second cells, indexing the second cell relative to the first cell by N CPP to define one or more intermediate device layouts to define a modified device layout with improved internal metal cut spacing in order to suppress BGE and LE.
Public/Granted literature
- US20200074043A1 METHOD FOR IMPROVED CUT METAL PATTERNING Public/Granted day:2020-03-05
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