- 专利标题: High bandwidth memory having plural channels
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申请号: US16267115申请日: 2019-02-04
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公开(公告)号: US10777232B2公开(公告)日: 2020-09-15
- 发明人: Seiji Narui
- 申请人: MICRON TECHNOLOGY, INC.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dorsey & Whitney LLP
- 主分类号: G11C5/06
- IPC分类号: G11C5/06 ; G11C7/10 ; H01L25/065 ; H01L27/108
摘要:
An apparatus that includes: a control chip; a plurality of memory chips stacked on the control chip, the plurality of memory chips including first and second memory chips; and a plurality of via conductors connected between the plurality of memory chips and the control chip. Each of the first and second memory chips is divided into a plurality of channels including a first channel. The plurality of via conductors include a first via conductor electrically connected between the first channel in the first memory chip and the control chip, and a second via conductor electrically connected between the first channel in the second memory chip and the control chip. The first and second memory chips substantially simultaneously output read data read from the first channel to the first and second via conductors, respectively.
公开/授权文献
- US20200251148A1 HIGH BANDWIDTH MEMORY HAVING PLURAL CHANNELS 公开/授权日:2020-08-06
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