- 专利标题： Semiconductor device
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申请号： US16098901申请日： 2016-09-20
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公开(公告)号： US10748830B2公开(公告)日： 2020-08-18
- 发明人: Yukimasa Hayashida , Daisuke Oya , Takayuki Matsumoto , Ryutaro Date
- 申请人： Mitsubishi Electric Corporation
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Studebaker & Brackett PC
- 国际申请： PCT/JP2016/077664 WO 20160920
- 国际公布： WO2018/055667 WO 20180329
- 主分类号： H01L23/31
- IPC分类号： H01L23/31 ; H01L23/373 ; H01L23/498 ; H01L23/28 ; H01L23/36 ; H01L23/10 ; H01L25/18 ; H01L25/07 ; H01L23/34 ; H01L23/48 ; H01L23/488 ; H01L23/00 ; H01L23/24 ; H01L23/053
摘要：
A wiring board (2) is provided on a heat radiation plate (1). A semiconductor chip (8) is provided on the wiring board (2). A case housing (10) is provided on the heat radiation plate (1) and surrounds the wiring board (2) and the semiconductor chip (8). Adhesive agent (11) bonds a lower surface of the case housing (10) and an upper surface peripheral portion of the heat radiation plate (1). A sealing material (13) is filled in the case housing (10) and covers the wiring board (2) and the semiconductor chip (8). A step portion (16,17) is provided to at least one of the lower surface of the case housing (10) and the upper surface peripheral portion of the heat radiation plate (1). A side surface of the heat radiation plate (1) and an outer side surface of the case housing (10) are flush with each other.
公开/授权文献
- US20190206757A1 SEMICONDUCTOR DEVICE 公开/授权日：2019-07-04
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