- 专利标题: MAMR writer with low resistance MAMR stack
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申请号: US16276500申请日: 2019-02-14
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公开(公告)号: US10741202B2公开(公告)日: 2020-08-11
- 发明人: Michael Kuok San Ho , Yunfei Ding , Zhigang Bai , Yaguang Wei , Terence Lam , Goncalo Baiao de Albuquerque , Xinjiang Shen , Feng Q. Liu
- 申请人: Western Digital Technologies, Inc.
- 申请人地址: US CA San Jose
- 专利权人: WESTERN DIGITAL TECHNOLOGIES, INC.
- 当前专利权人: WESTERN DIGITAL TECHNOLOGIES, INC.
- 当前专利权人地址: US CA San Jose
- 代理机构: Patterson & Sheridan, LLP
- 代理商 Steven H. Versteeg
- 主分类号: G11B5/235
- IPC分类号: G11B5/235 ; G11B5/31 ; G11B5/127 ; G11B5/00
摘要:
The present disclosure generally relates to a magnetic media drive employing a magnetic recording head. The head includes a main pole at a media facing surface (MFS), a trailing shield at the MFS, and a MAMR stack disposed between the main pole and the trailing shield at the MFS. The MAMR stack includes a seed layer and at least one magnetic layer. The seed layer is fabricated from a thermally conductive material having electrical resistivity lower than that of the main pole. The seed layer has a stripe height greater than a stripe height of the at least one magnetic layer. With the extended seed layer, the bias current from the trailing shield to the main pole spreads further away from the MFS along the extended seed layer before flowing into the main pole, reducing temperature rise at or near the MAMR stack, leading to improved write head reliability.
公开/授权文献
- US20190251992A1 MAMR WRITER WITH LOW RESISTANCE MAMR STACK 公开/授权日:2019-08-15
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