- 专利标题： Vertically stacked nFET and pFET with dual work function
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申请号： US16564795申请日： 2019-09-09
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公开(公告)号： US10707304B2公开(公告)日： 2020-07-07
- 发明人: Alexander Reznicek , Takashi Ando , Jingyun Zhang , Choonghyun Lee , Pouya Hashemi
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 L. Jeffrey Kelly, Esq.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/8238 ; H01L29/16 ; H01L29/423 ; H01L29/08 ; H01L29/49 ; H01L21/02 ; H01L21/306 ; H01L29/66 ; H01L21/28 ; H01L21/285 ; H01L27/12 ; H01L29/786 ; H01L21/84 ; H01L27/092 ; H01L27/06 ; H01L29/775 ; H01L21/822
摘要：
A semiconductor structure is provided that includes a pFET device including a first functional gate structure containing at least a p-type work function metal and present on physically exposed surfaces, and between, each Si channel material nanosheet of a first set of vertically stacked and suspended Si channel material nanosheets. The structure further includes an nFET device stacked vertically above the pFET device. The nFET device includes a second functional gate structure containing at least an n-type work function metal present on physically exposed surfaces, and between, each Si channel material nanosheet of a second set of vertically stacked and suspended Si channel material nanosheets.
公开/授权文献
- US20200006479A1 VERTICALLY STACKED NFET AND PFET WITH DUAL WORK FUNCTION 公开/授权日：2020-01-02
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