- 专利标题： Reliable gate contacts over active areas
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申请号： US16399181申请日： 2019-04-30
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公开(公告)号： US10693005B2公开(公告)日： 2020-06-23
- 发明人: Emre Alptekin , Albert M. Chu , Eric Eastman , Myung-Hee Na , Ravikumar Ramachandran
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Ryan, Mason & Lewis, LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/285 ; H01L29/66 ; H01L21/8234 ; H01L29/08 ; H01L29/417 ; H01L29/423 ; H01L29/165
摘要：
A method for manufacturing a semiconductor device comprises forming a plurality of fins in an active region, forming a plurality of gates around the plurality of fins in the active region, forming one or more gate contacts in the active region, and forming a plurality of contacts to source/drain regions in the active region.
公开/授权文献
- US20190259869A1 RELIABLE GATE CONTACTS OVER ACTIVE AREAS 公开/授权日：2019-08-22
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