发明授权
- 专利标题: Bias circuit
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申请号: US16177866申请日: 2018-11-01
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公开(公告)号: US10680555B2公开(公告)日: 2020-06-09
- 发明人: Takashi Soga
- 申请人: Murata Manufacturing Co., Ltd.
- 申请人地址: JP Kyoto
- 专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人地址: JP Kyoto
- 代理机构: Pearne & Gordon LLP
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@45d82c2d com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@186f7e4d
- 主分类号: G05F1/00
- IPC分类号: G05F1/00 ; H03F1/02 ; H03F3/21 ; H03F3/19 ; H03F1/30 ; H03F1/32 ; H03F3/24
摘要:
A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.
公开/授权文献
- US20190074796A1 BIAS CIRCUIT 公开/授权日:2019-03-07
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