Invention Grant
- Patent Title: Method for fabricating magnetoresistive random access memory
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Application No.: US16281103Application Date: 2019-02-21
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Publication No.: US10672979B1Publication Date: 2020-06-02
- Inventor: Yi-An Shih , I-Ming Tseng , Yi-Hui Lee , Ying-Cheng Liu , Yu-Ping Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@520d026c
- Main IPC: H01L43/12
- IPC: H01L43/12 ; G11C11/15 ; H01L43/02 ; H01L27/22
Abstract:
A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a bottom electrode layer on the IMD layer; forming a cap layer on the bottom electrode layer; and removing part of the cap layer, part of the bottom electrode layer, and part of the IMD layer to form a trench.
Information query
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