- 专利标题： Structure and method for alignment marks
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申请号： US14679326申请日： 2015-04-06
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公开(公告)号： US10665585B2公开(公告)日： 2020-05-26
- 发明人: Ming-Chang Wen , Chun-Kuang Chen , Hsien-Cheng Wang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/8234 ; H01L29/66 ; H01L29/49 ; H01L29/51
摘要：
The alignment mark and method for making the same are described. In one embodiment, a semiconductor structure includes a plurality of gate stacks formed on the semiconductor substrate and configured as an alignment mark; doped features formed in the semiconductor substrate and disposed on sides of each of the plurality of gate stacks; and channel regions underlying the plurality of gate stacks and free of channel dopant.
公开/授权文献
- US20150214225A1 Structure and Method for Alignment Marks 公开/授权日：2015-07-30
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