Invention Grant
- Patent Title: Methods of fabricating Fin Field Effect Transistor (FinFET) devices with uniform tension using implantations on top and sidewall of Fin
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Application No.: US16048904Application Date: 2018-07-30
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Publication No.: US10651296B2Publication Date: 2020-05-12
- Inventor: Tsung-Han Wu , Tong-Min Weng , Chun-Yi Huang , Po-Ching Lee , Chih-Hsuan Hsieh , Shu-Ching Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L21/324 ; H01L21/265
Abstract:
Methods of fabricating FinFET devices are provided. The method includes forming a fin over a substrate. The method also includes implanting a first dopant on a top surface of the fin and implanting a second dopant on a sidewall surface of the fin. The first dopant is different from the second dopant. The method further includes forming an oxide layer on the top surface and the sidewall surface of the fin, and forming a gate electrode layer over the oxide layer.
Public/Granted literature
Information query
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