- 专利标题: Substrate processing apparatus, lid cover and method of manufacturing semiconductor device
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申请号: US15659967申请日: 2017-07-26
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公开(公告)号: US10573535B2公开(公告)日: 2020-02-25
- 发明人: Shuhei Saido , Mika Urushihara , Yusaku Okajima
- 申请人: HITACHI KOKUSAI ELECTRIC INC.
- 申请人地址: JP Tokyo
- 专利权人: KOKUSAI ELECTRIC CORPORATION
- 当前专利权人: KOKUSAI ELECTRIC CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Volpe and Koenig, P.C.
- 优先权: JP2016-146276 20160726
- 主分类号: H01L21/443
- IPC分类号: H01L21/443 ; H01L21/67 ; H01L21/677 ; H01L21/8238
摘要:
A technique capable of preventing by-products from adhering to a lower portion of a process vessel utilizes a substrate processing apparatus including: a process vessel having a process chamber; a lid configured to close a lower end opening of the process vessel; a substrate retainer; an insulating structure; a process gas supply mechanism configured to supply a process gas; a purge gas supply unit configured to supply a purge gas to a lower region of the process vessel via a gap between the insulating structure and the lid; and a restrictor disposed in the gap. The restrictor regulates flow of the purge gas such that the flow rate of the purge gas supplied to a first portion of the lower region of the process vessel is greater than a flow rate of the purge gas supplied to a second portion of the lower region of the process vessel.
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