- 专利标题: Solid-state imaging element, production method thereof, and electronic device
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申请号: US15087884申请日: 2016-03-31
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公开(公告)号: US10566557B2公开(公告)日: 2020-02-18
- 发明人: Tetsuji Yamaguchi
- 申请人: SONY CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sheridan Ross P.C.
- 优先权: JP2013-181248 20130902
- 主分类号: H01L51/42
- IPC分类号: H01L51/42 ; H01L27/146 ; H01L51/44 ; H04N5/374 ; H04N5/378
摘要:
A solid-state imaging element including a phase difference detection pixel pair that includes first and second phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit arranged at an upper side of a semiconductor substrate and a second photoelectric conversion unit arranged within the semiconductor substrate. The first photoelectric conversion film may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.
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