- 专利标题: Power semiconductor module and power semiconductor device
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申请号: US15904450申请日: 2018-02-26
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公开(公告)号: US10561021B2公开(公告)日: 2020-02-11
- 发明人: Kenshi Terashima
- 申请人: FUJI ELECTRIC CO., LTD.
- 申请人地址: JP Kanagawa
- 专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人: FUJI ELECTRIC CO., LTD.
- 当前专利权人地址: JP Kanagawa
- 优先权: JP2017-098522 20170517
- 主分类号: H05K1/14
- IPC分类号: H05K1/14 ; H01L23/498 ; H01L25/16 ; H05K1/18 ; H01R12/58
摘要:
The area projections or a spacer occupies on the upper surface of a resin casing increases as the size of a power semiconductor module decreases, and therefore another means for defining a clearance between a control board and the resin casing is desired. A power semiconductor module is provided, including: a housing which houses a power semiconductor chip; and at least one control pin or guide pin which protrudes outward from an upper surface of the housing, wherein the at least one control pin or guide pin has at least one step in a height direction from the upper surface of the housing toward a tip farthest from the housing.
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