- 专利标题： Semiconductor device and manufacturing method of semiconductor device
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申请号： US15962567申请日： 2018-04-25
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公开(公告)号： US10559607B2公开(公告)日： 2020-02-11
- 发明人: Masao Okihara
- 申请人： LAPIS Semiconductor Co., Ltd.
- 申请人地址： JP Yokohama
- 专利权人： LAPIS SEMICONDUCTOR CO., LTD.
- 当前专利权人： LAPIS SEMICONDUCTOR CO., LTD.
- 当前专利权人地址： JP Yokohama
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2016-100782 20160519
- 主分类号： H01L27/144
- IPC分类号： H01L27/144 ; H01L31/0216 ; H01L31/103 ; H01L27/146
摘要：
A semiconductor device includes a substrate having a main surface, the main surface including a first region and a second region, and an element separation region that disposed on a boundary between the first region and the second region, a first filter disposed on the main surface in the first region, and a second filter disposed on the main surface in the second region, the first filter and the second filter overlapping each other in the element separation region in a plan view of the semiconductor device.
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