- 专利标题： Forming stacked twin III-V nano-sheets using aspect-ratio trapping techniques
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申请号： US15834721申请日： 2017-12-07
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公开(公告)号： US10546928B2公开(公告)日： 2020-01-28
- 发明人: Pouya Hashemi , Karthik Balakrishnan , Alexander Reznicek , Mahmoud Khojasteh
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Patterson + Sheridan, LLP
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L29/10 ; H01L29/06 ; H01L29/207 ; H01L29/34 ; H01L29/04 ; H01L21/02 ; H01L29/786 ; H01L29/66 ; H01L21/306
摘要：
A semiconductor structure that includes: a substrate, a twin vertical punch-through stopper layer structure connected to the substrate, and a plurality of nanosheets connected to and supported by the twin vertical punch-through stopper structure and isolated from the substrate by an insulating dielectric.
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