- 专利标题： Semiconductor assemblies having semiconductor material regions with contoured upper surfaces; and methods of forming semiconductor assemblies utilizing etching to contour upper surfaces of semiconductor material
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申请号： US16446780申请日： 2019-06-20
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公开(公告)号： US10546923B2公开(公告)日： 2020-01-28
- 发明人: Pranav P. Sharma , Vinay Nair , Sanjeev Sapra
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/161 ; H01L29/20 ; H01L27/108 ; H01L23/64
摘要：
Some embodiments include an integrated assembly having a region of first semiconductor material. The region has an upper surface along a cross-section. The upper surface has a flat-topped peak and a concavity adjacent the flat-topped peak. A pillar of second semiconductor material is over the region and directly against the region. The pillar extends vertically from the upper surface. Some embodiments include a method of forming an integrated assembly. A construction is formed to have a semiconductor region, and to have an insulative region extending over the semiconductor region and alongside the semiconductor region. A combination of three etches is utilized to expose an upper surface of the semiconductor region and to modify the upper surface of the semiconductor region to form said upper surface to include, along a cross-section, a flat-topped peak portion and an adjacent concavity portion.
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